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By D. J. Fisher

ISBN-10: 3038351164

ISBN-13: 9783038351160

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Agarwala: Journal of Applied Physics, 1967, 38[9], 3790-9 [161] Al[l]: Ni Diffusion Impurity diffusion coefficients were determined at 980 to 1320K by using a capillary reservoir technique. Nikaido: Nippon Kinzoku Gakkaishi, 1980, 44[3], 316-23 [162] Al: Si Diffusion The diffusion of Si in thin films of Al was measured by using a configuration with indiffusion from 2 constant sources to a specimen of finite thickness. Electron microprobe techniques were used to measure the Si distribution. 81(eV)/kT] The values were much higher than those measured in wrought Al.

Braski: Philosophical Magazine A, 1984, 50[5], 591-602 [234] Co-Ga: Co Diffusion The concentrations of anti-structure atoms and vacancies in ordered alloys having the B2-structure were investigated via measurements of the continuous-wave nuclear magnetic resonance intensities of Co and Ga. 1(eV)/kT] and to involve a nearest-neighbor vacancy jump mechanism. Furukawa: Materials Science Forum, 1987, 15-18, 1317-22 [235] Co-Ga: Ga Diffusion The concentrations of anti-structure atoms and vacancies in ordered alloys having the B2-structure were investigated via measurements of the continuous-wave nuclear Defect and Diffusion Forum Vol.

These trapping states were associated with interstitial lattice sites, dislocations and vacancies, respectively. Scully: Acta Materialia, 1998, 46[18], 6337-49 [132] Al: H Diffusion The techniques of H-introduction by mechanical abrasion, and thermal evolution spectroscopy, were applied to the determination of H diffusivity in high-purity Al and an Al-1000ppm[at]Si dilute alloy. 1(kcal/mol)/RT] The diffusivities were larger than those previously reported. It was suggested that the interstitial mechanism predominated in high-purity Al; even in the low-temperature region.

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A Directory of Arrhenius Parameters: Metals by D. J. Fisher


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